430的数据RAM 与FLASH的读写

#define FLASH_ADDRESS 0x1000 //定义FLASH信息区地址B段
void flash_erase(unsigned char*);

void read_flash(unsigned char *pc_byte, unsigned char *array,unsigned char amount);

void write_flash(unsigned char *pc_byte,unsigned char *array,unsigned char amount);

//******************************************************************************

//FLASH段擦除

void flash_erase(unsigned char *pc_word)

{

while(FCTL3 & BUSY); //如果处于忙状态，则等待

FCTL3 = FWKEY ; //清出LOCK标志，解锁

FCTL1 = FWKEY + ERASE ; //允许段擦除

*pc_word = 0; //擦除..擦除..

while(FCTL3 & BUSY);

FCTL3 = FWKEY + LOCK ; //加锁

}

//******************************************************************************

//向FLASH信息区读出指定数量的字节数据

//unsigned int*pc_word :信息区数据指针

//unsigned char *array :读出数据存放数据数组,8位长

//unsigned char amount :读操的数量,范围0-127

void read_flash(unsigned char *pc_byte, unsigned char *array,unsigned char amount)

{ unsigned char i;

for(i=0;i

{

*array = *pc_byte; //读数据，读数据时，flash地址自动加 1

array++; //接收缓冲区地址加 1

}
}

//******************************************************************************

//向FLASH信息区写入指定数量的字节数据

//unsigned char *pc_byte 信息区数据指针

//unsigned char *array :读出数据存放数据数组,8位长

//unsigned char amount :读操的数量,范围0-127

void write_flash(unsigned char *pc_byte,unsigned char *array, unsigned char amount)

{ unsigned char i;
_DINT();

while(FCTL3 & BUSY); //如果处于忙状态，则等待

FCTL3 = FWKEY ; //清出LOCK标志

FCTL1 = FWKEY + WRT ; //写操作，块编程，+ BLKWRT;

for(i=0;i

{

*pc_byte = *array;

//*pc_byte = num;

// num +=1;

array++; //发送缓冲区地址加 1

pc_byte++; //写flash时，地址人为加 1

while(!(FCTL3 & WAIT)); //如果处于忙状态，则等待，若用软件仿真，去掉／／这语句

}

FCTL1 = FWKEY; //写操作完成，清除编程允许位 WRT，BLKWRT

while(FCTL3 & BUSY);

FCTL3 = FWKEY + LOCK;

}

/*

#define RAM_ADDRESS 0x300
__no_init volatile uchar XINHAO[3] @ 0x300; //型号 默认201
__no_init volatile uchar BdFlag @ 0x303; ////ff表示没有标定,00表示已标定置零01表示已标定1点.02表示已标定2点.03表示已标定3点
__no_init volatile uchar EDZHI @ 0x304; //额定值
__no_init volatile uchar CYSJ @ 0x305; //采样时间
__no_init volatile uchar GJSJ @ 0x306; //自动关机时间
__no_init volatile uchar YLDW @ 0x307; // 压力单位
__no_init volatile float Pyz @ 0x30A; // 置零后的皮压值
__no_init volatile float Bdxs[16] @ 0x310; // 标定系数
__no_init volatile float Bdzhi[16] @ 0x350; // 标定值
__no_init volatile float Bdnm[16] @ 0x390; // 标定内码0X0D0

void main(void)
{
volatile unsigned int i; // Use volatile to prevent removal
// by compiler optimization

WDTCTL = WDTPW + WDTHOLD; // Stop WDT
FLL_CTL0 |= XCAP14PF; // Configure load caps
for (i = 0; i < 10000; i++); // Delay for 32 kHz crystal to
unsigned char *pc_flash; //定义字节指针变量 为字节读写
pc_flash = (unsigned char *) FLASH_ADDRESS; //为指针初始化 // stabilize
unsigned char *pc_ram; //定义字节指针变量 为字节读写
pc_ram = (unsigned char *) RAM_ADDRESS; //为指针初始化

while(1)

{
BdFlag = 1;
Bdxs[0]=3.14;
flash_erase(pc_flash); //段擦除
write_flash(pc_flash,pc_ram ,208); //写入指定字节数量
read_flash(pc_flash,pc_ram,208); //再读出刚才写的字节
LPM3; // Enter low power mode 3
} */